DOI: https://doi.org/10.20535/S0021347013040018
Открытый доступ Открытый доступ  Ограниченный доступ Доступ по подписке
Структура интегрального PIN-диода

Твердотельные СВЧ переключатели: схемотехника, технологии изготовления, тенденции развития. Обзор. Часть 1

Анатолий Федорович Березняк, Александр Станиславович Коротков

Аннотация


В статье предлагается классификация, описываются типы твердотельных переключателей, параметры переключателей, дан обзор технологических достижений в области построения твердотельных переключателей. Результаты обзора указывают на перспективность создания СВЧ AlGaN/GaN монолитных интегральных схем твердотельных переключателей.

Ключевые слова


СВЧ переключатель; СВЧ монолитная интегральная схема; СВЧ МИС; HEMT; нитрид галлия

Полный текст:

PDF

Литература


Hindle, P. "The State of RF/Microwave Switches," Microwave J., Vol. 53, No. 11, p. 20–36, Nov. 2010. URI: http://www.microwavejournal.com/articles/10269-the-state-of-rf-and-microwave-switches?v=preview.

Gotch, D. "A Review of Technological Advances in Solid-state Switches," Microwave J., Vol. 50, No. 11, p. 24–34, Nov. 2007.

"Understanding RF/Microwave Solid State Switches and Their Applications," Agilent Application Note. No. 5989-7618EN, May 2010.

Белов, Л. "Переключатели сверхвысокочастотных сигналов," Электроника: наука, технология, бизнес, № 1, C. 20–25, 2006.

Marsh, S. Practical MMIC Design. Norwood, MA: Artech House, 2006.

Bahl, I.; Bhartia, P. Microwave Solid State Circuit Design. Hoboken, NJ : John Wiley & Sons, 2003.

Разинкин, В. П.; Хрусталев, В. А.; Матвеев, С. Ю. Широкополосные управляемые СВЧ устройства высокого уровня мощности. Новосибирск: НГТУ, 2008. 305 с.

Robertson, I. D.; Lucyszyn, S. RFIC and MMIC design and technology. London: The Institution of Engineering and Technology, 2009.

Golio, M. The RF and Microwave Handbook. Boca Raton: CRC Press LLC, 2001.

Application note “Design With PIN Diodes.” Skyworks Solutions, Inc. No. 200312 Rev. C., April 27, 2009.

Nelson, R. "RF Switching options: the right fit might come with a loss," EDN Europe, p. 23–27, Oct. 2009.

"Solid State PIN Control Products," Narda microwave-east. URI : http://www.nardamicrowave.com/east/pdfs/SolidStatePinIntro.pdf.

Cory, R. "RF/Microwave Solid State Switches," MPD/Microwave Product Digest, May 2009.

Коротков, А. С. "Интегральные (микроэлектронные) радиоприемные устройства систем связи — обзор," Микроэлектроника, Т. 35, № 4, C. 321–341, 2006. URI: https://elibrary.ru/item.asp?id=9245559.

Boles, T.; Freeston, A. "New NanoSecond Switch Technology," Microwave J., Vol. 53, No. 6, p. 56–60, June 2010. URI: http://www.microwavejournal.com/articles/9649-new-nanosecond-switch-technology?v=preview.

Freeston, A. "Understanding Gate Lag and How it Differs From Switching Speed," MPD/Microwave Product Digest, Sept. 2008.

"Video Leakage Effects on Devices in Component Test," Agilent Application Note, No. 5989-6086EN, 2007.

Ladbrooke, P. H. MMIC Design GaAs FETs and HEMTs. Boston–London: Artech House, 1989.

The Pin Diode Circuit Designers’ Handbook. Microsemi-Watertown. Watertown: Microsemi Corp.-Watertown, 1998.

"Applications of PIN Diodes," Application Note. Hewlett-Packard, 922 p.

Cory, R.; Fryklund, D. "Solid State RF/Microwave Switch Technology: Part 2," MPD/Microwave Product Digest, June 2009.

May, G. S.; Spanos, C. J. Fundamentals of Semiconductor Manufacturing and Process Control. Hoboken, NJ: John Wiley & Sons, 2006.

Li, Q.; Zhang, Y. P. "CMOS T/R Switch Design: Towards Ultra-Wideband and Higher Frequency," IEEE J. Solid-State Circuits, Vol. 42, No. 3, p. 563–570, Mar 2007. DOI: https://doi.org/10.1109/JSSC.2006.891442.

Hindle, P. "2010 GaAs Foundry Services Outlook," Microwave J., Vol. 53, No. 6, p. 20–28, June 2010. URI: http://www.microwavejournal.com/articles/9647-2010-gaas-foundry-services-outlook?v=preview.

Bosch, W. "GaAs Industry in Europe — Technologies, Trends and New Developments," IEICE Transactions on Electronics, Vol. E91, No. 7, p. 1076-1083, 2008. DOI: https://doi.org/10.1093/ietele/e91-c.7.1076.

URI: http://www.aurigamicrowave.com/am_history.shtml.

Stevenson, R. "DARPA rattles up a half century," Compound Semiconductor, p. 19–21, July 2008.

Via, G. D.; Binari, S. C.; Judy, D. A "'Snapshot' of AlGaN/GaN HEMT State-of-the-Technology," GaAs Mantech Digest, 2004.

Rosker, M. "Wide Bandgap Semiconductor Devices and MMICs: A DARPA Perspective," GaAs Mantech Digest, 2005.

Rosker, M. "The DARPA COmpound Semiconductors on Silicon (COSMOS) Program," CS MANTECH Conf., Chicago, 2008.

Rosker, M. J.; Albrecht, J. D.; Cohen, E.; Hodiak, J.; Chang, T.-H. "DARPA’s GaN technology thrust," Proc. of MTT-S Int. Microwave Symp., 23-28 May 2010, Anaheim, CA, USA. IEEE, 2010. DOI: https://doi.org/10.1109/MWSYM.2010.5514755.

Reptin, G.; Gauthier, F. "KORRIGAN: Development of GaN HEMT Technology in Europe," Proc. of CS MANTECH Conf., 2006, Vancouver, British Columbia, Canada. Vancouver, 2006.

Nanishi, Y.; Miyamoto, H.; Suzuki, A.; Okumura, H.; Shibata, N. "Development of AlGaN/GaN High Power and High Frequency HFETs under NEDO’s Japanese National Project," Proc. of CS MANTECH Conf., 2006, Vancouver, British Columbia, Canada. Vancouver, 2006.

Niehenke, E. C.; Pucel, R. A.; Bahl, I. J. "Microwave and millimeter-wave integrated circuits," IEEE Trans. Microwave Theory Tech., Vol. 50, No. 3, P. 846–857, March 2002. DOI: https://doi.org/10.1109/22.989968.

Feng, M.; Shen, S.-C.; Caruth, D. C.; Huang, J.-J. "Device technologies for RF front-end circuits in next-generation wireless communications," Proc. IEEE, Vol. 92, No. 2, p. 354–375, Feb. 2004. DOI: https://doi.org/10.1109/JPROC.2003.821903.

Lim, C. L. "Tackle Wideband RF Switching With PIN Diodes," Microwaves & RF, Feb. 2007. URI: https://www.mwrf.com/components/tackle-wideband-rf-switching-pin-diodes.

PIN Diodes. URI: http://www.microwaves101.com/encyclopedia/diodes_PIN.cfm.

VPIN (Vertical P-I-N) GaAs Diode / TriQuint Semiconductor. URI: http://www.triquint.com/prodserv/foundry/process_info.cfm#VPIN. Дата доступа: 22.06.2011.

Alekseev, E.; Pavlidis, D.; Dickmann, M.; Hackbarth, T. "W-band InGaAs/InP PIN diode monolithic integrated switches," Proc. of IEEE GaAs IC Symp., 3-6 Nov. 1996, Orlando, USA. IEEE, 1996. DOI: https://doi.org/10.1109/GAAS.1996.567888.

Ziegler, V.; Berg, M.; Tobler, H.; Wolk, C.; Deufel, R.; Dickmann, J. "InP-Based monolithic integrated pin diode switches for mm-wave applications," Proc. of GAAS 98, 1998, Amsterdam. Amsterdam, 1998, p. 127–132.

Ziegler, V.; Gassler, C.; Wolk, C.; Berlec, F.-J.; Deufel, R.; Berg, M.; Dickmann, J.; Schumacher, H.; Alekseev, E.; Pavlidis, D. "InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems," Proc. of Int. Conf. on Indium Phosphide and Related Materials, 14-18 May 2000, Williamsburg, USA. IEEE, 2000, p. 341–344. DOI: https://doi.org/10.1109/ICIPRM.2000.850302.

Cobham, "Glass Microwave Integrated Circuit (GMIC)," Products and Services. URI: http://www.cobham.com/sensorsystems. Дата доступа: 22.06.2011.

Boles, T.; Brogle, J.; Hubert. R. "A monolithic high power, high linearity, multi-octave PIN diode T/R switch," MPD/Microwave Product Digest, July 2007.

Jordan, D. M.; Haslam, R. H.; Mallik, K.; Falster, R. J.; Wilshaw, P. R. "The development of semi-insulating silicon substrates for microwave devices," J. Electroch. Soc., Vol. 157, No. 5, p. 540–545. 2010. DOI: http://doi.org/10.1149/1.3353822.

Jain, N.; Gutmann, R. J. "Modeling and design of GaAs MESFET control devices for broad-band applications," IEEE Trans. Microwave Theory Tech., Vol. 38, No. 2, p. 109–117, Feb. 1990. DOI: https://doi.org/10.1109/22.46418.

Okumura, H. "Present status and future prospect of widegap semiconductor high-power devices," Japan. J. Appl. Phys., Vol. 45, No. 10A, p. 7565–7586, 2006. DOI: https://doi.org/10.1143/JJAP.45.7565.

Tanaka, T.; Hashimoto, T.; Washima, M.; Otoki, Y. "Large Diameter M-HEMT & InP-HEMT Epiwafers Grown in Multicharge MOVPE Reactors," Proc. of GaAs MANTECH, Saint Louis, MO, US, 2001.

Xing, H.; Zimmermann, T.; Deen, D.; Wang, K.; Yu, C.; Kosel, T.; Fay, P.; Jena, D. "Ultrathin all-binary AlN/GaN based high-performance RF HEMT technology," Proc. of CS MANTECH Conf., 14–17 April 2008, Chicago, Illinois, USA. Illinois, 2008.

Felbinger, J. G.; Chandra, V. S.; Sun, Y.; Eastman, L. F.; Wasserbauer, J.; Faili, F.; Babic, D.; Francis, D.; Ejeckam, F. "Comparison of GaN HEMTs on diamond and SiC substrates," IEEE Electron Device Lett., Vol. 28, No. 11, p. 948–950, Nov. 2007. DOI: https://doi.org/10.1109/LED.2007.908490.

Picogiga, "GaN Thin Epiwafers." URI: http://www.soitec.com/pdf/picogiga-gan-thin-epiwafers.pdf. Дата доступа: 22.06.2011.

Celler, G. K.; Cristoloveanu, S. "Frontiers of silicon-on-insulator," J. Appl. Phys., Vol. 93, No. 9, p. 4955–4978, May 2003. DOI: https://doi.org/10.1063/1.1558223.

Celler, G.; Wolf, M. "A guide to the technology, the process, the products," Soitec, July 2003. URI: http://www.soitec.com/pdf/SmartCut_WP.pdf. Дата доступа: 22.06.2011.

Miller, N.; Tapily, K.; Baumgart, H.; Celler, G. K.; Brunier, F.; Elmustafa, A. A. "Nanomechanical properties of strained silicon-on-insulator (SOI) films epitaxially grown on Si1-xGex and layer transferred by wafer bonding," Mater. Res. Soc. Symp. Proc, Vol. 1021, 2007.

Kelly, D. J. "CMOS-on-Sapphire RF Switches for Cellular Handset Applications," Proc. of CS MANTECH Conf., 14–17 April 2008, Chicago, Illinois, USA. Illinois, 2008.

Soitec, "III-V RF R&D." URI: http://www.soitec.com/picogiga/research-development/. Дата доступа: 28.12.2010.

Dumka, D. C.; Saunier, P. "AlGaN/GaN HEMTs on diamond substrate," Proc. of 65th Annual Device Research Conf., 18-20 Jun. 2007, Notre Dame, USA. IEEE, 2007, p. 31–32. DOI: https://doi.org/10.1109/DRC.2007.4373637.

48. Xing, H.; Zimmermann, T.; Deen, D.; Wang, K.; Yu, C.; Kosel, T.; Fay, P.; Jena, D. "Ultrathin all-binary AlN/GaN based high-performance RF HEMT technology," Proc. of CS MANTECH Conf., 14–17 April 2008, Chicago, Illinois, USA. Illinois, 2008.

46. Okumura, H. "Present status and future prospect of widegap semiconductor high-power devices," Japan. J. Appl. Phys., Vol. 45, No. 10A, p. 7565–7586, 2006. DOI: https://doi.org/10.1143/JJAP.45.7565.


Метрики статей

Загрузка метрик ...

Metrics powered by PLOS ALM





© Известия высших учебных заведений. Радиоэлектроника, 2004–2020
При копировании активная ссылка на материал обязательна
ISSN 2307-6011 (Online), ISSN 0021-3470 (Print)
т./ф. +38044 204-82-31, 204-90-41
Условия использования сайта